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Modulation of Flatband Voltage with Varying Nitrogen Composition and Thickness of TiN Metal Gate in Metal Oxide Semiconductor Devices with Atomic Layer Deposited HfO2 Gate Dielectric
- 제목
- Modulation of Flatband Voltage with Varying Nitrogen Composition and Thickness of TiN Metal Gate in Metal Oxide Semiconductor Devices with Atomic Layer Deposited HfO2 Gate Dielectric
- 저자
- 최창환
- 발행일
- 2012-08-17
- 학회명
- Nano Korea Symposium
- 개최지
- Seoul, Korea