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Understanding Mobility Mechanisms in Extremely Scaled HfO2 (EOT 0.42 nm) Using Remote Interfacial Layer Scavenging Technique and Vt-tuning Dipoles with Gate-First Process
- 제목
- Understanding Mobility Mechanisms in Extremely Scaled HfO2 (EOT 0.42 nm) Using Remote Interfacial Layer Scavenging Technique and Vt-tuning Dipoles with Gate-First Process
- 저자
- 최창환
- 발행일
- 2009-12-08
- 학회명
- IEEE International Electron Devices Meeting( IEDM)
- 개최지
- Baltimore