Effect of the RF bias on the plasma density in an argon inductively coupled plasma

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초록

Changing the RF bias is widely used to control the ion energy in inductively coupled plasma (ICP). Here, the plasma densities were measured using the floating harmonic method at various ICP powers and RF bias power frequencies. It is observed that there is an RF bias power (PB,min) that minimizes the plasma density. With increasing ICP power, PB,min is increased. When the frequency is changed from 12.5 MHz to 2 MHz, PB,min is decreased. To understand this phenomenon, the relative variation of the plasma density (δn) with the RF bias power is considered based on a power balance equation. PB,min is determined by δn, and δn changes based on the self-bias voltage caused by the RF bias power. Because the self-bias voltages change depending on the ICP power and frequency of the RF bias power, PB,min is shifted by altering the ICP power and the RF bias power frequency. The results are in good agreement with the experimental results.

키워드

SILICON-CARBIDEELECTRONCONTAMINATIONMOLYBDENUMEJECTIONDAMAGE
제목
Effect of the RF bias on the plasma density in an argon inductively coupled plasma
저자
Lee, Ho-wonKim, Kyung-HyunSeo, Jong InChung, Chin-Wook
DOI
10.1063/5.0015555
발행일
2020-09
유형
Article
저널명
Physics of Plasmas
27
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