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Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy
- Nguyen, M.-C.;
- Nguyen, A.H.-T.;
- Choi, J.-W.;
- Han, S.-Y.;
- Kim, J.-Y.;
- ... Choi, C.;
- 외 1명
초록
Effect of high pressure hydrogen annealing on polysilicon thin film transistors has been evaluated using a novel acquisition setup and analysis of deep trap states. Trap density was extracted with high resolution of density and energy level. Trap density was reduced by one order of magnitude after annealing. Passivation effect was maintained even after a strong hot carrier injection stress.
- 제목
- Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy
- 저자
- Nguyen, M.-C.; Nguyen, A.H.-T.; Choi, J.-W.; Han, S.-Y.; Kim, J.-Y.; Choi, R.; Choi, C.
- 발행일
- 2016-06-27
- 학회명
- 2016 International Conference on IC Design and Technology (ICICDT)
- 개최국가
- 베트남
- 학회 개최일
- 2016-06-27 ~ 2016-06-29