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The Effect of Titanium Tetrachloride-based Plasma Enhanced ALD TiN on the Threshold Voltage of Gate Last-Like Processed FD-SOI MOSFET with ALD HfO2 Gate Dielectric
- 제목
- The Effect of Titanium Tetrachloride-based Plasma Enhanced ALD TiN on the Threshold Voltage of Gate Last-Like Processed FD-SOI MOSFET with ALD HfO2 Gate Dielectric
- 저자
- 최창환
- 발행일
- 2017-07-16
- 학회명
- 17th International Conference on Atomic Layer Deposition (ALD 2017)
- 개최지
- Denver, USA