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Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode
- 제목
- Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode
- 저자
- 최창환
- 발행일
- 2002-12-09
- 학회명
- IEEE International Electron Devices Meeting( IEDM)
- 개최지
- San Francisco, USA