Effect of controlling residual moisture in atmospheric plasma spray-Y2O3 coatings on random defect generation by halogen-based plasma

초록

The fluorine-based plasma resistance properties of atmospheric plasma spray (APS)-Y2O3 coatings were investigated based on residual moisture control levels. APS-Y2O3 coatings at different moisture levels are exposed to F-poor (Ar, NF3, and O2) and F-rich (NF3 and O2) plasma. Outgassing varies with the residual moisture control level. When the plasma supplies sufficient energy, internal moisture reacts with the coating surface to form Y-OH, accelerating the coating degradation. This confirms the decreasing random defect occurrence in the moisture-controlled coatings. The F radical preferentially binds to Y-OH bonds, which have a lower strength than Y-O bonds in F-poor plasma, and reacts with Y-OH and Y-O bonds to form YOxFy in F-rich plasma. YOxFy formed by Y-OH bonds is vulnerable to plasma owing to its low binding strength, which accelerates the formation of random defects. This study highlights the importance of reducing random defects by effective moisture control.

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