Growth of Copper films by ALD using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as precursors

초록

opper thin films were grown on Si (100) substrates by atomic layer deposition (ALD) using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as precursors. The Cu metal is formed by treating the Cu precursor adsorbed on the Si with Et2Zn [1-2]. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by secondary electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). The results show that Cu ALD using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as precursors is self-controlled at temperatures of 100 - 120 ℃. The copper film was grown with a preferred orientation toward the [111] direction.