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High-Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment
High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- Shim, Jaewoo;
- Oh, Aely;
- Kang, Dong-Ho;
- Oh, Seyong;
- Jang, Sung Kyu;
- ... Choi, Changhwan;
- 외 8명
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251초록
A high-performance ReS₂-based thin-film transistor and photodetector with high on/off-current ratio (10⁴), high mobility (7.6 cm² V⁻¹ s⁻¹), high photoresponsivity (2.5 x 10⁷ A W⁻¹), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O₂ plasma treatment is reported.
키워드
FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; MOS2 TRANSISTORS; MONOLAYER MOS2; HIGH-MOBILITY; PHOSPHORUS; DEVICES; PHOTOLUMINESCENCE; PHOTOTRANSISTORS; NANOSHEETS
- 제목
- High-Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment
- 제목 (타언어)
- High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- 저자
- Shim, Jaewoo; Oh, Aely; Kang, Dong-Ho; Oh, Seyong; Jang, Sung Kyu; Jeon, Jaeho; Jeon, Min Hwan; Kim, Minwoo; Choi, Changhwan; Lee, Jaehyeong; Lee, Sungjoo; Yeom, Geun Young; Song, Young Jae; Park, Jin-Hong
- 발행일
- 2016-08
- 유형
- Article
- 권
- 28
- 호
- 32
- 페이지
- 6985 ~ 6992