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Low Gate Leakage Current and Interface State Density of ALD Al2O3 SiC MOS Device with NH3 Plasma Treatment
- 제목
- Low Gate Leakage Current and Interface State Density of ALD Al2O3 SiC MOS Device with NH3 Plasma Treatment
- 저자
- 최창환
- 발행일
- 2015-06-25
- 학회명
- International Forum on Functional Materials (IFFM)
- 개최지
- Ramada Plaza Jeju