Etching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas

Kim, Hyoun Woo; Lee, Jong Woo; Hwang, Woon Suk; Beom, Hoan O.; Lee, Seung Gol; Park, Se-Geun; Kim, Joohee; Chung, Duck Jin; Chang, Sung Pil; Joo, Young-Chang; Joo, Junghoon; Chung, Chin Wook; Park, Wan Jae; Kang, Chang-Jin; Joo, Sukho; Park, Soon Oh; Yoo, Chung-Gon; Kim, Sung Kyeong; Lee, Joung Ho; Cho, Sang-Deog; Choi, Dae-Kyu; Kim, Keeho; Jang, Jeong-Yeol

doi:10.1016/j.mee.2007.06.016

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Etching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas

Kim, Hyoun Woo;
Lee, Jong Woo;
Hwang, Woon Suk;
Beom, Hoan O.;
Lee, Seung Gol;
... Chung, Chin Wook;
외 17명

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초록

We have investigated the characteristics of Ar/O-2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O-2/(O-2+Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O-2/(O-2+Ar) gas flow ratio.

키워드

photoresist; low-k material; ICP; METHYLSILSESQUIOXANE

제목: Etching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas

저자: Kim, Hyoun Woo; Lee, Jong Woo; Hwang, Woon Suk; Beom, Hoan O.; Lee, Seung Gol; Park, Se-Geun; Kim, Joohee; Chung, Duck Jin; Chang, Sung Pil; Joo, Young-Chang; Joo, Junghoon; Chung, Chin Wook; Park, Wan Jae; Kang, Chang-Jin; Joo, Sukho; Park, Soon Oh; Yoo, Chung-Gon; Kim, Sung Kyeong; Lee, Joung Ho; Cho, Sang-Deog; Choi, Dae-Kyu; Kim, Keeho; Jang, Jeong-Yeol

DOI: 10.1016/j.mee.2007.06.016

발행일: 2008-02

유형: Article

저널명: Microelectronic Engineering

권: 85

호: 2

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