Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: NOR Gate Application

Park, Chung Hoon; Lee, Kwang Hong; Oh, Min Suk; Lee, Kimoon; Im, Seongil; Lee, Byoung Hun; Sung, Myung Mo

doi:10.1109/LED.2008.2007973

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Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: NOR Gate Application

Park, Chung Hoon;
Lee, Kwang Hong;
Oh, Min Suk;
Lee, Kimoon;
Im, Seongil;
... Sung, Myung Mo;
외 1명

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초록

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick Al2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 degrees C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm(2)/V.s, a high saturation current of 6 mu A, and an on/off current ratio of similar to 10(6), while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, NOR gate operation was well demonstrated.

키워드

Dual gate (DG); NOR logic gate; thin-film transistors (TFTs); ZnO; Density (specific gravity); Galerkin methods; Logic gates; Semiconducting organic compounds; Semiconducting zinc compounds; Thin film devices; Thin film transistors; Transistors; Zinc oxid; Atomic layers; Dual gate (DG); Field mobilities; Ground planes; NOR gates; NOR logic gate; On/off current ratios; Saturation currents; Single gates; Thin-film transistors (TFTs); ZnO; Gate dielectrics

제목: Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: NOR Gate Application

저자: Park, Chung Hoon; Lee, Kwang Hong; Oh, Min Suk; Lee, Kimoon; Im, Seongil; Lee, Byoung Hun; Sung, Myung Mo

DOI: 10.1109/LED.2008.2007973

발행일: 2009-01

유형: Article

저널명: IEEE Electron Device Letters

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호: 1

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