Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix

초록

A study of effect of deposition condition of germanium selenide (GeSe) switching layer to Conductive bridging random access memory (CBRAM) device property was conducted to enhance memory property and synaptic property. The devices deposited under the varied deposition conditions were analyzed by current distribution of each state (Low-resistance state [LRS], High-resistance state [HRS]), conduction mechanism analysis, chemical analysis, and synaptic analysis according to pulse conditions. When we deposited switching layer at lowest power (40 W), more Ag ions move to the switching matrix and make lower operation voltage. But there were some disadvantages, which were worst distribution and higher HRS current, less memory window, nonlinear and rapid increase of potentiation process. Conversely, although the device deposited at high voltage increased the operating voltage, but there are improvements, such as the highest memory window and improved linearity of potentiation. The best sample was conducted the synaptic property measurement, and the device successfully mimicked the biological synaptic property with the good linearity of potentiation and depression, spike-rate dependent plasticity (SRDP) and spike-timing dependent plasticity (STDP) properties.

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