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Plasma etching for the application to low-k dielectrics devices
- Lee, J.W.;
- Kim, H.W.;
- Han, J.W.;
- Kim, M.-S.;
- Yoo, B.-D.;
- ... Chung, Chin Wook;
- 외 18명
Citations
SCOPUS
2초록
We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.
키워드
ICP; Low-k material; Photoresist; Fourier transform infrared spectroscopy; Inductively coupled plasma; Photoresistors; Plasma etching; Bias power; Etching damage; Gas flow ratio; Low-k dielectric; Dielectric devices
- 제목
- Plasma etching for the application to low-k dielectrics devices
- 저자
- Lee, J.W.; Kim, H.W.; Han, J.W.; Kim, M.-S.; Yoo, B.-D.; Kim, M.-H.; Lee, C.-H.; Lee, C.H.; Lim, C.H.; Hwang, S.-K.; Lee, C.; Chung, D.J.; Park, S.-G.; Lee, S.G.; O, B.H.; Kim, J.; Chang, S.P.; Lee, S.H.; Chai, S.-Y.; Lee, W.I.; Park, S.-E.; Kim, K.; Choi, D.-K.; Chung, Chin Wook
- 발행일
- 2007-09
- 유형
- Conference Paper
- 권
- 555
- 페이지
- 113 ~ 118