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Electrical Characteristics of ALD La2O3 Capping Layers Using Different Lanthanum Precursors in MOS Devices with ALD HfO2, HfSiOx, and HfSiON Gate Dielectrics
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- Electrical Characteristics of ALD La2O3 Capping Layers Using Different Lanthanum Precursors in MOS Devices with ALD HfO2, HfSiOx, and HfSiON Gate Dielectrics
- 저자
- 최창환
- 발행일
- 2015-06-30
- 학회명
- Insulating Films on Semiconductors (INFOS)
- 개최지
- Udine, Italy