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Study of ashing for low-k dielectrics using the N-2/O-2 ferrite-core inductively coupled plasmas
- Kim, Hyoun Woo;
- Myung, Ju Hyun;
- Kim, Nam Ho;
- Lee, Han Sup;
- Park, Se-Geun;
- ... Chung, Chin Woo;
- 외 8명
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6초록
We have studied the characteristics of photoresist (PR) ashing using N-2/O-2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O-2/(O-2+N-2) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate, obtaining the PR ash rate and the PR to low-k materials etch selectivity, respectively, of 15,000 angstrom/min and 180. Fourier transform infrared spectroscopy and HF etch test coincidentally indicated that the ash damage to the low-k material decreased with decreasing the O-2/(O-2+N-2) gas flow ratio.
키워드
plasma processing and deposition; low-k material; ferrite-core; METHYLSILSESQUIOXANE; DAMAGE
- 제목
- Study of ashing for low-k dielectrics using the N-2/O-2 ferrite-core inductively coupled plasmas
- 저자
- Kim, Hyoun Woo; Myung, Ju Hyun; Kim, Nam Ho; Lee, Han Sup; Park, Se-Geun; Lee, Jae Gab; Chung, Chin Woo; Park, Wan Jae; Kang, Chang-Jin; Yoo, Chung-Gon; Ko, Kwang-Hyuk; Woo, Je-Ho; Choi, Sang-Don; Choi, Dae-Kyu
- 발행일
- 2006-05
- 유형
- Article; Proceedings Paper
- 저널명
- Thin Solid Films
- 권
- 506
- 페이지
- 222 ~ 224