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A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation
- Ku, Boncheol;
- Sim, Jae-Min;
- Hur, Jae Seok;
- Jeong, Jae Kyeong;
- Song, Yun-Heub;
- ... Choi, Changhwan
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4초록
We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec, large memory window (MW) of 2.5V, 2 bits/cell, and reliable 10-years retention are reported. Furthermore, new Gate-All-Around with Back-Gate (GAAB) structure and operation scheme are proposed to increase MW by improving the channel potential controllability and enhance resistance against disturb for Multi-Level Cell(MLC) operation.
키워드
Hafnium oxides; Indium compounds; Zirconium compounds
- 제목
- A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation
- 저자
- Ku, Boncheol; Sim, Jae-Min; Hur, Jae Seok; Jeong, Jae Kyeong; Song, Yun-Heub; Choi, Changhwan
- 발행일
- 2024-05
- 유형
- Proceedings Paper
- 저널명
- 2024 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW
- 페이지
- 1 ~ 4