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Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric
- 제목
- Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric
- 저자
- 최창환
- 발행일
- 2017-06-28
- 학회명
- Conference on Insulating Films on Semiconductors (INFOS)
- 개최지
- 포츠담, 독일