Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2- propoxide with Diethylzinc

초록

Copper thin films were grown on Si (100) substrates by atomic layer deposition (ALD) using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as precursors. The Cu metal is formed by treating the Cu precursor adsorbed on the Si with Et2Zn. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by secondary electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). The results show that Cu ALD using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as precursors is self-controlled at temperatures of 100 - 120C. The copper film was grown with a preferred orientation toward the [111] direction.