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Bandgap-adjusted bismuth tungstate-titanium dioxide S-scheme heterojunctions: Optimizing interfacial electronic structure for rapid VOC mineralization
- Yin, Qian;
- Maitlo, Hubdar Ali;
- Kim, Ki-Hyun
WEB OF SCIENCE
1SCOPUS
1초록
To strategically overcome the shortcomings of conventional photocatalysts, particularly inadequate redox potentials, a series of precisely engineered TiO2-Bi2WO6 heterojunction photocatalysts, coded as TB-x (x represents the molar ratio% of Bi: Ti), has been designed and synthesized through deliberate bandgap adjustment. An optimal interfacial electronic structure, formed by coupling wide-bandgap TiO2 (3.0–3.2 eV) with narrower-bandgap Bi2WO6 (2.6–2.9 eV), enables efficient charge dynamics under low-intensity UV irradiation (~ 1 W). The optimized TB-5 demonstrates complete removal of 5 ppm formaldehyde (FA: 100% XFA) within 600 s, achieving a clean air delivery rate of 10.37 L min-1 and apparent quantum yield of 2.68E-01%. The exceptional activity is supported by the formation of a robust S-scheme heterojunction, as confirmed both experimentally and theoretically via density functional theory calculations. This charge preservation mechanism is remarkably robust, converting 81.6% of FA (initial concentration: 100 ppm) into CO2 within 2 h. In-situ DRIFTS analysis further suggests that FA oxidation proceeds sequentially through dioxymethylene and formate intermediates. This work thus establishes a foundational strategy for practical indoor air purification by integrating advanced S-scheme design with atomic-level mechanistic insight, charting a clear path from lab-scale discovery to real-world application.
키워드
- 제목
- Bandgap-adjusted bismuth tungstate-titanium dioxide S-scheme heterojunctions: Optimizing interfacial electronic structure for rapid VOC mineralization
- 저자
- Yin, Qian; Maitlo, Hubdar Ali; Kim, Ki-Hyun
- 발행일
- 2026-10
- 유형
- Article
- 권
- 9
- 호
- 5
- 페이지
- 1 ~ 24
- 언어
- ENG
- 출판사
- Springer Science and Business Media B.V.
- 발행국가
- 영국
- 분량
- 24 페이지
- ISSN
- E 2522-0136
P 2522-0128