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Improved Interface State Density (Dit) Characteristics of ALD HKMG GaN MOS Device with Surface Passivation
- 제목
- Improved Interface State Density (Dit) Characteristics of ALD HKMG GaN MOS Device with Surface Passivation
- 저자
- 최창환
- 발행일
- 2017-06-22
- 학회명
- International Conference on Materials for Advanced Technologies (ICMAT 2017)
- 개최지
- Suntec, Singapore