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Improvement of Plasma Resistance of Anodic Aluminum-Oxide Film in Sulfuric Acid Containing Cerium(IV) Ion
- So, Jongho;
- Choi, Eunmi;
- Kim, Jin-Tae;
- Shin, Jae-Soo;
- Song, Je-Boem;
- ... Chung, Chin-Wook;
- 외 2명
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16초록
The parts of equipment in a process chamber for semiconductors are protected with an anodic aluminum-oxide (AAO) film to prevent plasma corrosion. We added cerium(IV) ions to sulfuric acid in the anodizing of an AAO film to improve the plasma corrosion resistance, and confirmed that the AAO film thickness increased by up to similar to 20% when using 3 mM cerium(IV) ions compared with general anodizing. The alpha-Al2O3 phase increased with increasing cerium(IV) ion concentration. The breakdown voltage and etching rate improved to similar to 35% and 40%, respectively. The film's performance regarding the generation of contamination particles reduced by similar to 50%.
키워드
plasma corrosion; plasma etch rate; anodic aluminum oxide; cerium(IV); CORROSION-RESISTANCE; AL2O3 FILMS; SPECTROSCOPY; ANODIZATION; ELECTROLYTE; REDUCTION; STABILITY; CERAMICS; BEHAVIOR; DENSITY
- 제목
- Improvement of Plasma Resistance of Anodic Aluminum-Oxide Film in Sulfuric Acid Containing Cerium(IV) Ion
- 저자
- So, Jongho; Choi, Eunmi; Kim, Jin-Tae; Shin, Jae-Soo; Song, Je-Boem; Kim, Minjoong; Chung, Chin-Wook; Yun, Ju-Young
- 발행일
- 2020-02
- 유형
- Article
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- COATINGS
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- 10
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- 2
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