Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for <i>p</i>-Type Semiconductors

초록

Tellurium (Te) has emerged as a prominent candidate among two-dimensional materials due to its impressive properties, such as high mobility, stability, and compatibility with low-temperature processing. However, achieving consistent uniformity over large areas for ultrathin Te films deposited at low temperatures has remained a substantial challenge. Atomic layer deposition (ALD) has been proposed as a promising solution, offering precise thickness control and highly conformal thin film deposition even at low temperatures. This study introduces a successful method for the layer-by-layer growth of Te thin films using high-pressure ALD (HP-ALD) with a multiple-dosing (MD) strategy. The resulting films exhibit a promising Hall mobility of 51.2 cm2 V-1 s-1, alongside high stability and excellent surface coverage. The integration of HP-ALD with MD represents a significant advancement in Te thin film fabrication, overcoming previous limitations and paving the way for the broader utilization of Te in next-generation technologies.

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