Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics

초록

We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at +/- 15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of similar to 10(3) of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures.

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