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Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
- Lee, Kimoon;
- Oh, Min Suk;
- Mun, Sung-jin;
- Lee, Kwang H.;
- Ha, Tae Woo;
- ... Sung, Myung M.;
- 외 5명
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94초록
Direct quantitative mapping of the density-of-states, named the photo-excited charge-collection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. [GRAPHICS] .
키워드
Optical fibers; Semiconducting organic compounds; Zinc oxide; glass fiber; naphthacene derivative; pentacene; zinc oxide; Density-of-states; Interface traps; Interfacial traps; Pentacene thin-film transistors; Pentacenes; Quantitative mapping; ZnO; article; chemistry; equipment design; genetic procedures; instrumentation; methodology; photon; semiconductor; spectroscopy; Thin film transistors
- 제목
- Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
- 저자
- Lee, Kimoon; Oh, Min Suk; Mun, Sung-jin; Lee, Kwang H.; Ha, Tae Woo; Kim, Jae Hoon; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Byoung H.; Sung, Myung M.; Im, Seongil
- 발행일
- 2010-08
- 유형
- Article
- 권
- 22
- 호
- 30
- 페이지
- 3260 ~ 3265