Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy

  • Lee, Kimoon
  • Oh, Min Suk
  • Mun, Sung-jin
  • Lee, Kwang H.
  • Ha, Tae Woo
  • ... Sung, Myung M.
  • 외 5명
Citations

WEB OF SCIENCE

84
Citations

SCOPUS

94

초록

Direct quantitative mapping of the density-of-states, named the photo-excited charge-collection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. [GRAPHICS] .

키워드

Optical fibersSemiconducting organic compoundsZinc oxideglass fibernaphthacene derivativepentacenezinc oxideDensity-of-statesInterface trapsInterfacial trapsPentacene thin-film transistorsPentacenesQuantitative mappingZnOarticlechemistryequipment designgenetic proceduresinstrumentationmethodologyphotonsemiconductorspectroscopyThin film transistors
제목
Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
저자
Lee, KimoonOh, Min SukMun, Sung-jinLee, Kwang H.Ha, Tae WooKim, Jae HoonPark, Sang-Hee KoHwang, Chi-SunLee, Byoung H.Sung, Myung M.Im, Seongil
DOI
10.1002/adma.201000722
발행일
2010-08
유형
Article
저널명
Advanced Materials
22
30
페이지
3260 ~ 3265