상세 보기
Remote Plasma Atomic Layer Deposited Al2O3 4H SiC MOS Capacitor with H2 Plasma Passivation and Post Metallization Annealing
- 제목
- Remote Plasma Atomic Layer Deposited Al2O3 4H SiC MOS Capacitor with H2 Plasma Passivation and Post Metallization Annealing
- 저자
- 최창환
- 발행일
- 2015-06-30
- 학회명
- Insulating Films on Semiconductors (INFOS)
- 개최지
- Udine, Italy