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Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO2 using a novel oxygen scavenging process for sub 65 nm application
- 제목
- Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO2 using a novel oxygen scavenging process for sub 65 nm application
- 저자
- 최창환
- 발행일
- 2005-06-16
- 학회명
- Symposium on VLSI Technology (VLSI)
- 개최지
- Kyoto, Japan