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Effects of Composition and Thickness of TiN Metal Gate on the Equivalent Oxide Thickness and Flat-Band Voltage in Metal Oxide Semiconductor Devices
- 제목
- Effects of Composition and Thickness of TiN Metal Gate on the Equivalent Oxide Thickness and Flat-Band Voltage in Metal Oxide Semiconductor Devices
- 저자
- 최창환
- 발행일
- 2013-06-26
- 학회명
- INFOS
- 개최지
- Cracow, Poland