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Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique
- 제목
- Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique
- 저자
- 최창환
- 발행일
- 2012-05-22
- 학회명
- 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- 개최지
- Busan Bexco, Korea