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Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer
- Park, C.H.;
- Lee, K.H.;
- Lee, B.H.;
- Sung, Myung M.;
- Im, Seongil
Citations
SCOPUS
2초록
We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.
키워드
Current ratios; Ferroelectric layers; Glass substrates; High field effect mobility; Low voltages; Memory window; Non-volatile memories; Retention properties; Thin buffer; ZnO; Aluminum; Buffer layers; Epitaxial layers; Ferroelectricity; Nanoelectronics; Optical waveguides; Semiconducting organic compounds; Substrates; Zinc oxide; Thin film transistors
- 제목
- Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer
- 저자
- Park, C.H.; Lee, K.H.; Lee, B.H.; Sung, Myung M.; Im, Seongil
- 발행일
- 2010-03
- 유형
- Conference Paper
- 저널명
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
- 페이지
- 1185 ~ 1186