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Educational Studies
ISSN
P 0305-5698 E 1465-3400
출판사
Carfax Publishing Ltd. Taylor & Francis
국가
ENGLAND
발행 상태
활성
데이터베이스 수록 정보
A&HCI 2010 (1년)
JCR 1997-2019 (23년)
Scopus 2017-2020 (4년)
SJR 1999-2019 (21년)
SSCI 2010-2021 (12년)
전체 27건 중 1번부터 10번까지의 결과를 표시합니다.
2019
Article
Joint properties and reliability of Cu/Sn-Ag pillar bumps via low-temperature thermo-compression bonding
- Park, Jae-Yong ;
- Lee, Ja Yeon ;
- Park, Hwan-Pil ;
- Kim, Sung-Chul ;
- Lee, Tae-Young ;
- 외 2명
- 2019-08
- Microelectronic Engineering
- ELSEVIER
2017
Article
CuO embedded silica nanoparticles for tungsten oxidation via a heterogeneous Fenton-like reaction
- Kim, Kijung ;
- Yi, Dong Kee ;
- Paik, Ungyu
- 2017-11
- Microelectronic Engineering
- ELSEVIER SCIENCE BV
Article
The effects of process temperature on the work function modulation of ALD HfO₂ MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
- Kim, Young Jin ;
- Lim, Donghwan ;
- Han, Hoon Hee ;
- Sergeevich, Andrey Sokolov ;
- Jeon, Yu-Rim ;
- ... Choi, Changhwan ;
- 외 2명
- 2017-06
- Microelectronic Engineering
- ELSEVIER
Article
Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
- Han, Hoon Hee ;
- Lim, Donghwan ;
- Sergeevich, Andrey Sokolov ;
- Jeon, Yu-Rim ;
- Lee, Jae Ho ;
- ... Choi, Changhwan ;
- 외 1명
- 2017-06
- Microelectronic Engineering
- ELSEVIER
Article
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectrics
- Lim, Donghwan ;
- Lee, Jae Ho ;
- Choi, Changhwan
- 2017-06
- Microelectronic Engineering
- ELSEVIER
2015
Article
Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics
- Lim, Donghwan ;
- Jung, Woo Suk ;
- Kim, Young Jin ;
- Choi, Changhwan
- 2015-11
- Microelectronic Engineering
- ELSEVIER
Article
The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack
- Lim, Donghwan ;
- Jung, Woo Suk ;
- Choi, Moon Suk ;
- Gil, Youngin ;
- Choi, Changhwan
- 2015-11
- Microelectronic Engineering
- ELSEVIER
Article
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing
- Heo, Seung Chan ;
- Lim, Donghwan ;
- Jung, Woo Suk ;
- Choi, Rino ;
- Yu, Hyun-Yong ;
- ... Choi, Changhwan
- 2015-11
- Microelectronic Engineering
- ELSEVIER
Article
One-pot synthesis of Mn3O4-decorated GaN nanowires for drastic changes in magnetic and gas-sensing properties
- Kim, Hyoun Woo ;
- Kwon, Yong Jung ;
- Na, Han Gil ;
- Cho, Hong Yeon ;
- Lee, Chongmu ;
- 외 1명
- 2015-05
- Microelectronic Engineering
- ELSEVIER
Article
High performance thin film transistors using low-temperature solution-processed Li-incorporated In2O3/ZrO2 stacks
- 2015-04
- Microelectronic Engineering
- Elsevier BV
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