최창환 프로필 사진

최창환

Choi, Chang hwan

신소재공학부

공과대학

Scopus

연구분야

  • 반도체 소자 및 공정

자료 필터

자료유형

발행연도

2002 ~ 2026
2002 2026

키워드

언어

전체 392건 중 11번부터 20번까지의 결과를 표시합니다.

2025
Article

Reliability improvement of Ge2Sb2Te5-based phase-change memory devices with increased post annealing time

  • Park, San ; 
  • Park, Jisu ; 
  • Kim, Sunbum ; 
  • Park, Junwoo ; 
  • Jung, Pilseong ; 
  • ... Choi, Changhwan ; 
  • 외 1명
  • 2025-09
  • Applied Surface Science
  • ELSEVIER
Article

Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios

  • Choi, Sehyeon ; 
  • Lim, Yunseo ; 
  • Kim, Sejin ; 
  • Park, San ; 
  • Ku, Boncheol ; 
  • ... Choi, Changhwan ; 
  • 외 5명
  • 2025-09
  • Advanced Electronic Materials
  • WILEY
Article

Zirconium-doped hafnia (HfZrOx) ferroelectric capacitor with atomic layer deposited HfO2, ZrO2, and La2O3 interfacial layers

  • Chung, Chulwon ; 
  • Lim, Jiyeon ; 
  • Ku, Boncheol ; 
  • Park, Kyungsoo ; 
  • Choi, Changhwan
  • 2025-08
  • Ceramics International
  • ELSEVIER SCI LTD
Article

Chemical and Elecrtrical Charaterization of ALD Cobalt Nitride (CoN) as an Alternative Barrier for Advanced Cu Interconnects

  • Im, Yehbeen ; 
  • Na, Youngseo ; 
  • Lim, Hyun-jin ; 
  • Kim, Donguk ; 
  • Seo, Kangbaek ; 
  • ... Choi, Chang hwan ; 
  • 외 1명
  • 2025-07
  • 2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC
  • IEEE
Article

Suppression of Size Effect in MoPd Thin Films for Nanoscale Interconnects

  • Lim, Hyun-jin ; 
  • Lee, Seungchae ; 
  • Na, Youngseo ; 
  • Im, Yehbeen ; 
  • Kim, Donguk ; 
  • ... Choi, Chang hwan ; 
  • 외 1명
  • 2025-07
  • 2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC
  • IEEE
Article

Influence of chlorine on the memory characteristics of MONOS device with Plasma-Enhanced atomic layer deposited Si3N4 charge trap layer

  • Kim, Sejin ; 
  • Choi, Sehyeon ; 
  • Park, San ; 
  • Ku, Boncheol ; 
  • Kim, Hyungjun ; 
  • ... Choi, Changhwan ; 
  • 외 6명
  • 2025-07
  • Applied Surface Science
  • ELSEVIER
Article

Temperature-Dependent ALD and Quasi-ALE Behavior of Ruthenium Thin Films

  • Na, Youngseo ; 
  • Lim, Hyun-jin ; 
  • Han, Sangkuk ; 
  • Ahn, Hyojin ; 
  • Im, Yehbeen ; 
  • ... Choi, Changhwan ; 
  • 외 2명
  • 2025-07
  • 2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC
  • IEEE
Article

Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devices

  • Park, Junhyeok ; 
  • Chung, Chulwon ; 
  • Ku, Boncheol ; 
  • Yun, Seunghyeon ; 
  • Park, Kyungsoo ; 
  • ... Choi, Changhwan
  • 2025-04
  • Nanoscale
  • ROYAL SOC CHEMISTRY
Article

Enhanced electrical stability and reliability of amorphous IGZO/HfO2 thin film transistors with CF4 plasma treatment

  • 2025-04
  • Applied Surface Science
  • ELSEVIER
Article

Polyurethane packed graphene-coated spider silk by dip-casting for a highly stretchable strain sensor

  • Abbas, Zaigham ; 
  • Hassan, Gul ; 
  • Khan, Muhammad Umair ; 
  • Abbas, Haider ; 
  • Ahmad, Basheer ; 
  • ... Choi, Changhwan ; 
  • 외 3명
  • 2025-03
  • Journal of Materials Chemistry B
  • ROYAL SOC CHEMISTRY