권대웅 프로필 사진

권대웅

Kwon, Daewoong

공과대학

융합전자공학부

Web Of Science Scopus

자료 필터

자료유형

발행연도

2023 ~ 2026
2023 2026

키워드

언어

전체 82건 중 61번부터 70번까지의 결과를 표시합니다.

2024
Article

Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf₀.₅Zr₀.₅O₂

  • Han, Changhyeon ; 
  • Kwon, Ki Ryun ; 
  • Yim, Jiyong ; 
  • Kim, Jeonghan ; 
  • Kim, Sangwoo ; 
  • ... Kwon, Daewoong ; 
  • 외 4명
  • 2024-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications

  • 2024-05
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors

  • Lee, Kitae ; 
  • Yim, Jiyong ; 
  • Shin, Wonjun ; 
  • Kim, Sihyun ; 
  • Kwon, Daewoong
  • 2024-05
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation

  • 2024-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Optimal data distribution in FeFET-based computing-in-memory macros

  • 2024-05
  • 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024
  • IEEE
Article

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

  • Lee, Seongwon ; 
  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Yun, Sanghyuk ; 
  • Park, Junseong ; 
  • ... Kwon, Daewoong ; 
  • 외 6명
  • 2024-04
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System

  • Koo, Ryun-Han ; 
  • Shin, Wonjun ; 
  • Kim, Seungwhan ; 
  • Im, Jiseong ; 
  • Park, Sung-Ho ; 
  • ... Kwon, Daewoong ; 
  • 외 4명
  • 2024-02
  • Advanced Science
  • WILEY
Article

Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels

  • 2024-02
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Lee, Seongwon ; 
  • Yun, Sanghyuk ; 
  • Park, Junseong ; 
  • ... Kwon, Daewoong ; 
  • 외 7명
  • 2024-01
  • Applied Physics Letters
  • American Institute of Physics
2023
Article

Analog Synaptic Devices Based on IGZO Thin-Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High-Performance Neuromorphic Systems

  • Kwon, Dongseok ; 
  • Park, Eun Chan ; 
  • Shin, Wonjun ; 
  • Koo, Ryun-Han ; 
  • Hwang, Joon ; 
  • ... Kwon, Daewoong ; 
  • 외 2명
  • 2023-12
  • ADVANCED INTELLIGENT SYSTEMS
  • WILEY