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자료 필터
자료유형
발행연도
2023 ~ 2026
2023 2026
키워드
언어
전체 82건 중 71번부터 80번까지의 결과를 표시합니다.
2023
Article
Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
- Kim, Sang Woo ;
- Shin, Wonjun ;
- Kim, Munhyeon ;
- Kwon, Ki Ryun ;
- Yim, Jiyong ;
- ... Kwon, Daewoong ;
- 외 7명
- 2023-12
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Ferroelectric polarization-switching acceleration of sputtered Hf0.5Zr0.5O2 with defect-induced polarization of interlayer
- Han, Changhyeon ;
- Yim, Jiyong ;
- Nguyen, An ;
- Kim, Jeonghan ;
- Kwon, Ki Ryun ;
- ... Kwon, Daewoong ;
- 외 5명
- 2023-10
- Journal of Alloys and Compounds
- ELSEVIER SCIENCE SA
Article
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
- Koo, Ryun-Han ;
- Shin, Wonjun ;
- Ryu, Sangwoo ;
- Lee, Kyungmin ;
- Park, Sung-Ho ;
- ... Kwon, Daewoong ;
- 외 6명
- 2023-10
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias
- Shin, Wonjun ;
- Koo, Ryun-Han ;
- Kim, Sangwoo ;
- Kwon, Dongseok ;
- Kim, Jae-Joon ;
- ... Kwon, Daewoong ;
- 외 1명
- 2023-10
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Conference
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor with Amorphous Indium–Gallium–Zinc Oxide Channel
- 2023-08-25
Article
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2
- Han, Changhyeon ;
- Kwon, Ki Ryun ;
- Kim, Jeonghan ;
- Yim, Jiyong ;
- Kim, Sangwoo ;
- ... Kwon, Daewoong ;
- 외 4명
- 2023-06
- Materials Science in Semiconductor Processing
- ELSEVIER SCI LTD
Article
Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors
- Shin, Wonjun ;
- Kim, Sangwoo ;
- Koo, Ryun-Han ;
- Kwon, Dongseok ;
- Kim, Jae-Joon ;
- ... Kwon, Daewoong ;
- 외 2명
- 2023-06
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401] (Materials Science in Semiconductor Processing (2023) 160, (S136980012300094X), (10.1016/j.mssp.2023.107401))
- Han, Changhyeon ;
- Kwon, Ki Ryun ;
- Kim, Jeonghan ;
- Yim, Jiyong ;
- Kim, Sangwoo ;
- ... Kwon, Daewoong ;
- 외 4명
- 2023-06
- Materials Science in Semiconductor Processing
- ELSEVIER SCI LTD
Article
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel
- Jeong, Soi ;
- Han, Changhyeon ;
- Yim, Jiyong ;
- Kim, Jeonghan ;
- Kwon, Ki Ryun ;
- ... Kwon, Daewoong ;
- 외 4명
- 2023-05
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Self-Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network
- Shin, Wonjun ;
- Im, Jiyong ;
- Koo, Ryun-Han ;
- Kim, Jaehyeon ;
- Kwon, Ki-Ryun ;
- ... Kwon, Daewoong ;
- 외 3명
- 2023-05
- Advanced Science
- WILEY