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자료 필터
자료유형
발행연도
2002 ~ 2026
2002 2026
키워드
언어
전체 392건 중 231번부터 240번까지의 결과를 표시합니다.
2017
Conference
Improved Performance of Gate-Last FDSOI Tunnel Field-Effect-Transistors (TFETs) with Modulating Al2O3 Composition in Atomic Layer Deposited HfAlOx Gate Dielectrics
- 2017-06-28
Conference
Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric
- 2017-06-28
Conference
The Effects of Process Temperature on the Work Function Modulation of ALD HfO2 MOS Device with Plasma Enhanced ALD TiN Metal Gate Using TDMAT Precursor Development
- 2017-06-28
Conference
Improved Interface State Density (Dit) Characteristics of ALD HKMG GaN MOS Device with Surface Passivation
- 2017-06-22
Article
The effects of process temperature on the work function modulation of ALD HfO₂ MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
- Kim, Young Jin ;
- Lim, Donghwan ;
- Han, Hoon Hee ;
- Sergeevich, Andrey Sokolov ;
- Jeon, Yu-Rim ;
- ... Choi, Changhwan ;
- 외 2명
- 2017-06
- Microelectronic Engineering
- ELSEVIER
Article
Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
- Han, Hoon Hee ;
- Lim, Donghwan ;
- Sergeevich, Andrey Sokolov ;
- Jeon, Yu-Rim ;
- Lee, Jae Ho ;
- ... Choi, Changhwan ;
- 외 1명
- 2017-06
- Microelectronic Engineering
- ELSEVIER
Article
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectrics
- Lim, Donghwan ;
- Lee, Jae Ho ;
- Choi, Changhwan
- 2017-06
- Microelectronic Engineering
- ELSEVIER
Conference
Comparative Study on the Electrical Characateristics between Gate-First and Gate-Last Processed MOS Devices
- 2017-05-18